Understanding Base Biasing Influence on Large Signal Behavior in HBTs
نویسنده
چکیده
Large-signal behavior of HBT devices can depend strongly on the type of source used to bias the base of the devices. Understanding of this behavior is advanced using sample device measurements and model simulations. The device used is a wafer-level InGaP/GaAs HBT represented with a modified GummelPoon non-linear model. Results show that the use of constant voltage source allowed for a higher power gain compression as compared to constant current-source use. Once properly setup, simulations with the extracted non-linear model accurately predict power compression behavior for either base source type.
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